COMPARISON OF AR-ION, O-ION, AND CL-ION IMPLANT-DAMAGE GETTERING OF GOLD FROM SILICON USING METAL-OXIDE SILICON TECHNIQUES

被引：8

作者：

NASSIBIAN, AG

GOLJA, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.331528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6168 / 6173

页数：6

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