HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5489 - 5491

[2] GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (02): : 523 - 532

[3] ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING [J]. SURFACE TECHNOLOGY, 1979, 8 (02): : 161 - 170

[4] DETERMINATION OF SURFACE-GENERATION AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (10) : 890 - 892

[5] THIN-FILMS IN RESTRICTED GEOMETRIES [J]. THIN SOLID FILMS, 1978, 50 (MAY) : 73 - 80

[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[7] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[8] EFFECTS OF TRICHLOROETHYLENE ADDITION ON THERMAL-OXIDATION OF SILICON AT 1200-DEGREES-C [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) : 69 - 72

[9] HERMANN H, 1975, FESTKORPERPROBLEME, V15, P279

[10] HERRING RB, 1976, 18TH ANN EL MAT C

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5489 - 5491

[2] GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (02): : 523 - 532

[3] ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING [J]. SURFACE TECHNOLOGY, 1979, 8 (02): : 161 - 170

[4] DETERMINATION OF SURFACE-GENERATION AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (10) : 890 - 892

[5] THIN-FILMS IN RESTRICTED GEOMETRIES [J]. THIN SOLID FILMS, 1978, 50 (MAY) : 73 - 80

[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[7] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[8] EFFECTS OF TRICHLOROETHYLENE ADDITION ON THERMAL-OXIDATION OF SILICON AT 1200-DEGREES-C [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) : 69 - 72

[9] HERMANN H, 1975, FESTKORPERPROBLEME, V15, P279

[10] HERRING RB, 1976, 18TH ANN EL MAT C