GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5489 - 5491

[2] Carter G., 1976, ION IMPLANTATION SEM

[3] THIN-FILMS IN RESTRICTED GEOMETRIES [J]. THIN SOLID FILMS, 1978, 50 (MAY) : 73 - 80

[4] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[5] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[6] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] BEAM-LEAD TECHNOLOGY [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &

[9] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[10] ENHANCED SOLUBILITY AND ION-PAIRING OF CU AND AU IN HEAVILY DOPED SILICON AT HIGH-TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (7-8) : 731 - 740

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5489 - 5491

[2] Carter G., 1976, ION IMPLANTATION SEM

[3] THIN-FILMS IN RESTRICTED GEOMETRIES [J]. THIN SOLID FILMS, 1978, 50 (MAY) : 73 - 80

[4] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[5] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[6] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] BEAM-LEAD TECHNOLOGY [J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &

[9] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 807 - +

[10] ENHANCED SOLUBILITY AND ION-PAIRING OF CU AND AU IN HEAVILY DOPED SILICON AT HIGH-TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (7-8) : 731 - 740