EFFECTS OF TRICHLOROETHYLENE ADDITION ON THERMAL-OXIDATION OF SILICON AT 1200-DEGREES-C

被引：9

作者：

HATTORI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 01期

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D O I：

10.1143/JJAP.17.69

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：69 / 72

页数：4

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[6]

HATTORI T, UNPUBLISHED

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