STUDY OF ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON

被引：18

作者：

CHOU, SL ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1197 / 1203

页数：7

共 31 条

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