GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T)

被引：59

作者：

COLLINS, DR

SCHRODER, DK

SAH, CT

机构：

来源：

关键词：

D O I：

10.1063/1.1754459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：323 / &

共 20 条

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SAH, CT
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[10] GATOS HC, 1960, PROPERTIES ELEMEN ED, P163