THE SUPER-NERNSTIAN PH SENSITIVITY OF TA2O5-GATE ISFETS

被引：51

作者：

POGHOSSIAN, AS

机构：

[1] Yerevan Politechnical Institute, Yerevan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 7卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(92)80326-S

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The influence of the NaF and H2O2 solutions on the pH sensitivity of Ta2O5-gate ISFETs is studied. In the range pH less than or similar 4 the adding of NaF causes a decrease of the reference electrode voltage V(r) which corresponds to the positive charging of the Ta2O5 film surface. In the range pH almost-equal-to 4-6 (depending on NaF concentration) super-Nernstian pH sensitivity is observed (the slope was 80-85 mV/pH). Exposure of the Ta2O5-gate ISFET to H2O2 causes a parallel shift of the V(r) versus pH curve. Several possible mechanisms are proposed and discussed.

引用

页码：367 / 370

页数：4

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