ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING

被引：80

作者：

AKIYAMA, T

UJIHIRA, Y

OKABE, Y

SUGANO, T

NIKI, E

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,BUNKYO KU,TOKYO 113,JAPAN

[2] UNIV TOKYO,DEPT ELECT & ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

[3] INST VOCAT TRAINING,SAGAMIHARA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 12期

关键词：

D O I：

10.1109/T-ED.1982.21054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1936 / 1941

页数：6

相关论文

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