SENSITIVITY CONTROL OF ISFETS BY CHEMICAL SURFACE MODIFICATION

被引：104

作者：

VANDENBERG, A ^{[1
]}

BERGVELD, P ^{[1
]}

REINHOUDT, DN ^{[1
]}

SUDHOLTER, EJR ^{[1
]}

机构：

[1] TWENTE UNIV TECHNOL,ORGAN CHEM LAB,7500 AE ENSCHEDE,NETHERLANDS

来源：

SENSORS AND ACTUATORS | 1985年 / 8卷 / 02期

关键词：

The authors wish to express then gratitude to the Twente Centre of Mlcroelectronlcs (C M E T ) for financial support of the ion-sensor research project;

D O I：

10.1016/0250-6874(85)87010-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：129 / 148

页数：20

共 32 条

[1] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING [J].

AKIYAMA, T ;

UJIHIRA, Y ;

OKABE, Y ;

SUGANO, T ;

NIKI, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1936-1941

[2]

Albert A., 1984, DETERMINATION IONIZA

[3] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].

BERGVELD, P .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&

[4] THE OPERATION OF AN ISFET AS AN ELECTRONIC DEVICE [J].

BERGVELD, P .

SENSORS AND ACTUATORS, 1981, 1 (01) :17-29

[5] CHEMICALLY MODIFIED SILICON DIOXIDE SURFACES REACTION OF N-ALKYLDIMETHYLSILANOLS AND N-OXAALKYL-DIMETHYLSILANOLS WITH HYDRATED SURFACE OF SILICON DIOXIDE-QUESTION OF LIMITING SURFACE CONCENTRATION [J].

BOKSANYI, L ;

LIARDON, O ;

KOVATS, ES .

ADVANCES IN COLLOID AND INTERFACE SCIENCE, 1976, 6 (02) :95-137

[6] THE ROLE OF BURIED OH-SITES IN THE RESPONSE MECHANISM OF INORGANIC-GATE PH-SENSITIVE ISFETS [J].

BOUSSE, L ;

BERGVELD, P .

SENSORS AND ACTUATORS, 1984, 6 (01) :65-78

[7]

Bousse L., 1982, THESIS ENSCHEDE

[8] THE INFLUENCE OF THE PH ON THE ELECTROLYTE-SIO2-SI SYSTEM STUDIED BY ION-SENSITIVE FET MEASUREMENTS AND QUASISTATIC C-V MEASUREMENTS [J].

DEROOIJ, NF ;

BERGVELD, P .

THIN SOLID FILMS, 1980, 71 (02) :327-331

[9] ELECTRONIC SEMICONDUCTING OXIDES AS PH SENSORS [J].

FOG, A ;

BUCK, RP .

SENSORS AND ACTUATORS, 1984, 5 (02) :137-146

[10] CHEMICALLY MODIFIED PARYLENE GATE FIELD-EFFECT TRANSISTORS - PREPARATION OF PH INSENSITIVE PARYLENE GATE FOR CHEMICAL MODIFICATION [J].

FUJIHIRA, M ;

FUKUI, M ;

OSA, T .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 106 (1-2) :413-418

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