ELECTRON-STATES IN HEAVILY DOPED SEMICONDUCTORS

被引：2

作者：

BERGGREN, KF

SERNELIUS, BE

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 06期

关键词：

D O I：

10.1080/01418638008222324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：751 / 754

页数：4

共 11 条

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[2]

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[3]

FRITZSCHE H, 1978, METAL NONMETAL TRANS

[4]

Keyes R. W., 1977, Comments on Solid State Physics, V7, P149

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KOBAYASHI, N ;

IKEHATA, S ;

KOBAYASHI, S ;

SASAKI, W .

SOLID STATE COMMUNICATIONS, 1979, 32 (11) :1147-1150

[6]

LEROUXHUGON P, 1976, J PHYS S10, V37, P323

[7]

Mott N. F., 1974, METAL INSULATOR TRAN

[8] ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT [J].

QUIRT, JD ;

MARKO, JR .

PHYSICAL REVIEW B, 1973, 7 (08) :3842-3858

[9] CONDENSED PHASE OF LITHIUM IMPURITIES IN SILICON [J].

ROSE, JH ;

SHORE, HB ;

ZAREMBA, E .

PHYSICAL REVIEW LETTERS, 1976, 37 (06) :354-357

[10] SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT [J].

SASO, T ;

KASUYA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (05) :1566-1575

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