A NEW ANALYTICAL TECHNIQUE OF PHOTOLUMINESCENCE FOR OPTIMIZATION OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

HSU, JK

JONES, SH

LAU, KM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3781 / 3784

页数：4

相关论文

共 7 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[2] PHOTO-LUMINESCENCE INVESTIGATION OF RESIDUAL SHALLOW ACCEPTORS IN ALXGA1-X AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
MIRCEAROUSSEL, A
BRIERE, A
HALLAIS, J
VINK, AT
VEENVLIET, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4351 - 4356
[3] EFFECT OF V/III VARIATION ON THE OPTICAL-PROPERTIES OF GAAS AND ALXGA1-XAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MOHAMMED, K
MERZ, JL
KASEMSET, D
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 103 - 105
[4] THE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOVPE GAAS AND GAALAS
NAKANISI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 282 - 294
[5] RESIDUAL DONORS AND ACCEPTORS IN HIGH-PURITY GAAS AND INP GROWN BY HYDRIDE VPE
SKROMME, BJ
LOW, TS
ROTH, TJ
STILLMAN, GE
KENNEDY, JK
ABROKWAH, JK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 433 - 457
[6] Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321
[7] IONIZED IMPURITY DENSITY IN N-TYPE GAAS
WOLFE, CM
STILLMAN, GE
DIMMOCK, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 504 - &