COMPARISONS OF MICROWAVE PERFORMANCE BETWEEN SINGLE-GATE AND DUAL-GATE MODFETS

被引：24

作者：

CHEN, YK ^{[1
]}

WANG, GW ^{[1
]}

RADULESCU, DC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

Manuscript received August 24; 1987. This work was supported in part by the Joint Service Electronics Program; by General Electric; and by the Office of Naval Research. The authors are with the School of Electrical Engineering; Cornell University and National Nanofabrication Facility; Ithaca; NY 14853. IEEE Log Number 8718936;

D O I：

10.1109/55.2040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / 61

页数：3

共 9 条

[1] GAAS DUAL-GATE SCHOTTKY-BARRIER FETS FOR MICROWAVE-FREQUENCIES [J].

ASAI, S ;

MURAI, F ;

KODERA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) :897-904

[2]

CHAO PC, 1985, JUL P IEEE CORN C, P163

[3]

CHEN YK, 1985, 1985 IEEE GAASIC S, P125

[4]

CHEN YK, 1987, 1987 P IEEE DEV RES

[5]

CRIPPS SC, 1977, P EURO MICROWAVE C

[6] GAAS DUAL-GATE MESFETS [J].

FURUTSUKA, T ;

OGAWA, M ;

KAWAMURA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :580-586

[7]

KIM B, 1984, IEEE T MICROW THEORY, V32, P256

[8]

LEICHTI CA, 1975, IEEE T MICROWAVE THE, V23, P461

[9]

WANG GW, 1987, 7 SOTAPOCS 172ND EL

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