GAAS DUAL-GATE MESFETS

被引：28

作者：

FURUTSUKA, T ^{[1
]}

OGAWA, M ^{[1
]}

KAWAMURA, N ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,OPT DEVICE RES LAB,KAWASAKI 211,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：580 / 586

页数：7

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