ON THE TEMPERATURE-VARIATION OF THRESHOLD VOLTAGE OF GAAS-MESFETS

被引：22

作者：

WONG, H ^{[1
]}

LIANG, CL ^{[1
]}

CHEUNG, NW ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 07期

关键词：

D O I：

10.1109/16.141221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the temperature dependence of threshold voltage of depletion-mode GaAs MESFET's with epitaxially grown n channels. A new approach to threshold shift analysis is taken to allow direct comparison with threshold measurements. The contributions from various temperature-dependent effects to the threshold-voltage shift were studied, including built-in voltage of the Schottky barrier, deep-level transients, capping layer effects, substrate-channel built-in voltage, and the k factor which is related to channel mobility. We have devised a quasi-dc method for threshold voltage measurement, which enabled us to measure threshold voltage as a function of temperature with minimum deep-level transient effect. A method has also been developed to measure the temperature dependence of built-in voltage which is completely free from transient effects. Our results show that the major contributors to the temperature variation of threshold voltage are the temperature dependence of the Schottky barrier built-in voltage and the effect of the capping layer.

引用

页码：1571 / 1577

页数：7

共 11 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[2] ROLE OF THE PIEZOELECTRIC EFFECT IN DEVICE UNIFORMITY OF GAAS INTEGRATED-CIRCUITS [J].

CHANG, MF ;

LEE, CP ;

ASBECK, PM ;

VAHRENKAMP, RP ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :279-281

[3]

CHEN CH, 1986, IEEE T ELECTRON DEV, V33, P792, DOI 10.1109/T-ED.1986.22570

[4]

LEE SJ, 1982, ELECTRON LETT, V17, P176

[5] TEMPERATURE-DEPENDENCE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR THRESHOLD VOLTAGE [J].

LIANG, CL ;

WONG, H ;

MUTIKAINEN, RH ;

FOURKAS, RM ;

CHEUNG, NW ;

SOKOLICH, M ;

KWOK, SP ;

CHEUNG, SK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1773-1778

[6]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P447

[7]

SATO RN, 1987, IEEE J SOLID STATE C, V25, P121

[8]

Shibatomi A., 1987, Solid State Devices 1986. Sixteenth European Solid State Device Research Conference (ESSDERC), P185

[9] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].

STILLMAN, GE ;

WOLFE, CM .

THIN SOLID FILMS, 1976, 31 (1-2) :69-88

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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