TEMPERATURE-DEPENDENCE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR THRESHOLD VOLTAGE

被引：10

作者：

LIANG, CL

WONG, H

MUTIKAINEN, RH

FOURKAS, RM

CHEUNG, NW

SOKOLICH, M

KWOK, SP

CHEUNG, SK

机构：

[1] HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509

[2] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80908

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1773 / 1778

页数：6

共 8 条

[1]

CHEN CH, 1986, IEEE T ELECTRON DEV, V33, P792, DOI 10.1109/T-ED.1986.22570

[2] TIW NITRIDE THERMALLY STABLE SCHOTTKY CONTACTS TO GAAS - CHARACTERIZATION AND APPLICATION TO SELF-ALIGNED GATE FIELD-EFFECT TRANSISTOR FABRICATION [J].

GEISSBERGER, AE ;

SADLER, RA ;

BALZAN, ML ;

CRITES, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1701-1706

[3] COMPARISON OF LOW-TEMPERATURE AND HIGH-TEMPERATURE REFRACTORY-METAL SILICIDES SELF-ALIGNED GATE ON GAAS [J].

KWOK, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1383-1391

[4]

KWOK SP, 1987, 14TH P INT S GAAS RE

[5]

LEE SJ, 1982, ELECTRON LETT, V17, P176

[6]

POATE JM, 1978, THIN FILMS INTERDIFF, pCH13

[7]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, pxii

[8]

UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383

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