TIW NITRIDE THERMALLY STABLE SCHOTTKY CONTACTS TO GAAS - CHARACTERIZATION AND APPLICATION TO SELF-ALIGNED GATE FIELD-EFFECT TRANSISTOR FABRICATION

被引：25

作者：

GEISSBERGER, AE

SADLER, RA

BALZAN, ML

CRITES, JW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1701 / 1706

页数：6

共 11 条

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[4]

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[5] INVESTIGATION OF REACTIVELY SPUTTERED TUNGSTEN NITRIDE AS HIGH-TEMPERATURE STABLE SCHOTTKY CONTACTS TO GAAS [J].

GEISSBERGER, AE ;

SADLER, RA ;

LEYENAAR, FA ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3091-3094

[6] COMPARISON OF LOW-TEMPERATURE AND HIGH-TEMPERATURE REFRACTORY-METAL SILICIDES SELF-ALIGNED GATE ON GAAS [J].

KWOK, SP .

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[7]

LEE RE, 1982, IEEE GAAS IC S, P177

[8] STUDIES OF TI-W-AU METALLIZATION ON ALUMINUM [J].

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[9]

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[10]

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