DONOR DOPING IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE USING ETHYL IODIDE

Highly effective donor doping during metalorganic chemical vapor deposition interdiffused multilayer growth of Hg1-xCdxTe is demonstrated using a novel precursor of iodine, ethyl iodide. It is shown that the doping level can be controlled in the range of 7x10(14)-2x10(18) cm-3 with abrupt profiles and without any memory effect. Activation of the iodine as a singly ionized donor is shown to be near 100% at concentrations <1x10(17) cm-3. Electron mobilities are greater-than-or-equal-to 1x10(5) and greater-than-or-equal-to 2x10(5) cm2/V s at 80 and 20 K, respectively, for concentrations of (1-3)x10(15) cm-3 and x values approximately 0.22. Auger limited lifetimes of approximately 1 ps are observed for these layers at 80 K.