OPERATION OF BULK CMOS DEVICES AT VERY LOW-TEMPERATURES

[1] TEMPERATURE-DEPENDENCE OF LATCHUP IN CMOS CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 41 - 43

[2] ELMANSY YA, 1974, IEDM, P35

[3] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[4] GAENSSLEN FH, 1977, IEDM, P520

[5] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 423 - 430

[6] SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 537 - 539

[7] KOIDE K, 1983, ISSCC, P148

[8] MASUHARA T, 1980, ISSCC, P224

[9] MINATO O, 1982, ISSCC, P256

[10] OOSAKA F, 1978, FUJITSU SCI TECH J, P53

[1] TEMPERATURE-DEPENDENCE OF LATCHUP IN CMOS CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 41 - 43

[2] ELMANSY YA, 1974, IEDM, P35

[3] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[4] GAENSSLEN FH, 1977, IEDM, P520

[5] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 423 - 430

[6] SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 537 - 539

[7] KOIDE K, 1983, ISSCC, P148

[8] MASUHARA T, 1980, ISSCC, P224

[9] MINATO O, 1982, ISSCC, P256

[10] OOSAKA F, 1978, FUJITSU SCI TECH J, P53