ANALYSIS OF CONDUCTION IN FULLY DEPLETED SOI MOSFETS

[1] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 410 - 412

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246

[3] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 187 - 188

[4] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[5] PINTO MR, 1985, PISCES IIB USER MANU

[6] STURM JC, FALL M MATERIALS RES

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO, P226

[8] WADA T, COMMUNICATION

[9] SHORT-CHANNEL EFFECT IN FULLY DEPLETED SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 399 - 402

[1] DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 410 - 412

[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246

[3] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 187 - 188

[4] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[5] PINTO MR, 1985, PISCES IIB USER MANU

[6] STURM JC, FALL M MATERIALS RES

[7] SZE SM, 1981, PHYSICS SEMICONDUCTO, P226

[8] WADA T, COMMUNICATION

[9] SHORT-CHANNEL EFFECT IN FULLY DEPLETED SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) : 399 - 402