PHOTOELECTRIC PROPERTIES OF ZN3P2

被引：18

作者：

PAWLIKOWSKI, JM ^{[1
]}

MIROWSKA, N ^{[1
]}

BECLA, P ^{[1
]}

机构：

[1] WROCLAW TECH UNIV,INST INORGAN CHEM & RARE ELEMENTS,PL-50372 WROCLLAW,POLAND

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 07期

关键词：

D O I：

10.1016/0038-1101(80)90133-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：755 / 758

页数：4

共 11 条

[1]

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[5]

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[6]

PAWLIKOWSKI JM, 1976, ACTA PHYS POL A, V49, P139

[7] PHOTOCONDUCTIVITY AND DEMBER EFFECT IN ZN3P2 [J].

PAWLIKOWSKI, JM ;

MIROWSKA, N ;

KROLICKI, F .

INFRARED PHYSICS, 1978, 18 (04) :343-346

[8] DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN ZN3P2 [J].

PAWLIKOWSKI, JM ;

MISIEWICZ, J ;

MIROWSKA, N .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (12) :1027-1033

[9] ABSORPTION-EDGE OF ZN3P2 S-K, 80-K, AND 300-K [J].

PAWLIKOWSKI, JM ;

MISIEWICZ, J ;

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BECLA, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (02) :K153-K156

[10]

PAWLIKOWSKI JM, 1977, OPT APPL, V7, P127

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