PHOTOVOLTAGE SPECTRA OF METAL-SILICON (P-TYPE) DIODES NEAR INDIRECT ABSORPTION-EDGE OF SILICON

被引：8

作者：

LEPPIHALME, M ^{[1
]}

TUOMI, T ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,SF-02150 ESPOO 15,FINLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 33卷 / 01期

关键词：

D O I：

10.1002/pssa.2210330112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：125 / 133

页数：9

共 18 条

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