ALN GAN SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引:43
作者
SITAR, Z [1 ]
PAISLEY, MJ [1 ]
YAN, B [1 ]
DAVIS, RF [1 ]
RUAN, J [1 ]
CHOYKE, JW [1 ]
机构
[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260
关键词
D O I
10.1016/0040-6090(91)90203-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlN/GaN superlattices with layer thicknesses between 0.5 and 20 nm have been grown. The substrates were alpha(6H)-SiC(0001) and Al2O3(0001) (sapphire). The growth was performed using a modified gas source molecular beam epitaxy (MBE) technique. Standard effusion cells were used as sources of aluminum and gallium, and a small, MBE-compatible, electron cyclotron resonance plasma source was used to activate nitrogen gas prior to deposition. Auger, X-ray, and transmission electron microscopy studies confirmed the existence of well-defined layers. High resolution electron microscopy revealed pseudomorphic behavior between the two materials for layers thinner than 6 nm. By contrast, completely relaxed individual layers of GaN and AlN with respect to each other were present for bilayer periods above 20 nm. Cathodoluminescence showed a shift in the emission peak of up to 0.7 eV. The observed emission energy shifts were used to estimate the band discontinuities.
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页码:311 / 320
页数:10
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