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HYSTERESIS OF TRAPPED CHARGE IN ALGASB BARRIER AS A MECHANISM FOR THE CURRENT BISTABILITY IN ALGASB INAS ALGASB DOUBLE-BARRIER STRUCTURES

被引：11
作者：
BUOT, FA
RAJAGOPAL, AK
机构：
[1] Naval Research Laboratory, Washington
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期
关键词：
D O I：
10.1063/1.111382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple theory of charge buildup and bistability is used to show that the new hysteresis and bistability in the current-voltage behavior recently reported in AlGaSb/InAs/AlGaSb double-barrier structures is directly related to the bistability and hysteresis in the hole population of the AlGaSb barrier layer. This occurs well before the resonant-tunneling-current peak.
引用
收藏
页码：2994 / 2996
页数：3
相关论文
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