NUMERICAL-SIMULATION OF INTRINSIC BISTABILITY AND HIGH-FREQUENCY CURRENT OSCILLATIONS IN RESONANT TUNNELING STRUCTURES

被引：151

作者：

JENSEN, KL

BUOT, FA

机构：

[1] Naval Research Laboratory, Washington

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.66.1078

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Intrinsic high-frequency oscillations (almost-equal-to 2.5 THz) in current and corresponding quantum-well density have been simulated for the first time for a fixed-bias voltage in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristics of a resonant tunneling diode. Scattering and self-consistency are included. Hysteresis and "plateaulike" behavior of the time-averaged I-V curve are simulated in the NDR region. Intrinsic bistability is manifested by the phenomenon of unstable electron charge buildup and ejection from the quantum well.

引用

收藏

页码：1078 / 1081

页数：4

相关论文

共 28 条

[1] SIMULATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODES [J].

BABA, T ;

MIZUTA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1322-L1325

[2] DERIVATION AND CORRECTION OF THE TSU-ESAKI TUNNELING CURRENT FORMULA [J].

BANDARA, KMSV ;

COON, DD .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :693-696

[3] QUANTUM-THEORY OF HOT-ELECTRON TUNNELLING IN MICROSTRUCTURES [J].

BARKER, JR .

PHYSICA B & C, 1985, 134 (1-3) :22-31

[4] LATTICE WEYL-WIGNER FORMULATION OF EXACT MANY-BODY QUANTUM-TRANSPORT THEORY AND APPLICATIONS TO NOVEL SOLID-STATE QUANTUM-BASED DEVICES [J].

BUOT, FA ;

JENSEN, KL .

PHYSICAL REVIEW B, 1990, 42 (15) :9429-9457

[5] IMPORTANCE OF SPACE-CHARGE EFFECTS IN RESONANT TUNNELING DEVICES [J].

CAHAY, M ;

MCLENNAN, M ;

DATTA, S ;

LUNDSTROM, MS .

APPLIED PHYSICS LETTERS, 1987, 50 (10) :612-614

[6] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[7] WIGNER-FUNCTION MODEL OF A RESONANT-TUNNELING SEMICONDUCTOR-DEVICE [J].

FRENSLEY, WR .

PHYSICAL REVIEW B, 1987, 36 (03) :1570-1580

[8] QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES [J].

FRENSLEY, WR .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :739-742

[9] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[10] INVESTIGATIONS ON RESONANT TUNNELING IN III-V-HETEROSTRUCTURES [J].

GUERET, P ;

ROSSEL, C ;

MARCLAY, E ;

MEIER, H .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :278-285