INFLUENCE OF PHOSPHORUS VAPOR AMBIENT FOR INGAASP GROWTH ON GAAS SUBSTRATE

被引：7

作者：

ISHIKAWA, J

ITO, T

TAKAHASHI, NS

KURITA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.337562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3895 / 3899

页数：5

共 15 条

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