LOW THRESHOLD CURRENT-DENSITY OF GAINASP VISIBLE INJECTION-LASER DIODES LATTICE MATCHED WITH (100) GAAS EMITTING AT 705 NM

被引：8

作者：

KAWANISHI, H

TSUCHIYA, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：37 / 39

页数：3

共 15 条

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[6] ROOM-TEMPERATURE PULSED OPERATION OF GAXIN1-XASYP1-Y/GAXIN1-XASYP1-Y DH VISIBLE INJECTION-LASER GROWN ON (100) GAAS BY A 2-PHASE-SOLUTION TECHNIQUE [J].

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[8] LPE GROWTH OF IN0.48GA0.52AS0.01P0.99 LATTICE-MATCHED TO GAAS FROM AN IN MELT RICH IN P [J].

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[9]

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[10] PHOTO-LUMINESCENCE OF LATTICE-MATCHED IN1-XGAXP1-YASY LAYERS ON GAAS [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (08) :723-724

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