ROOM-TEMPERATURE PULSED OPERATION OF GAXIN1-XASYP1-Y/GAXIN1-XASYP1-Y DH VISIBLE INJECTION-LASER GROWN ON (100) GAAS BY A 2-PHASE-SOLUTION TECHNIQUE

被引：3

作者：

KAWANISHI, H

AOTA, T

IWAKAMI, T

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 06期

关键词：

D O I：

10.1049/el:19840176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：263 / 264

页数：2

共 8 条

[1] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J].

CAMPBELL, JC ;

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

LUDOWISE, MJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :327-330

[2] LPE GROWTH OF IN0.48GA0.52AS0.01P0.99 LATTICE-MATCHED TO GAAS FROM AN IN MELT RICH IN P [J].

KAWANISHI, H ;

HIRAOKA, M ;

YOSHIOKA, K ;

NISHIO, K ;

NAKAGOMI, T ;

TANAKA, S .

ELECTRONICS LETTERS, 1982, 18 (09) :384-385

[3]

KAWANISHI H, 1984, JPN J APPL PHYS 2, V23

[4]

KAWANISHI H, 1984, JPN J APPL PHYS 1, V23

[5] PHOTO-LUMINESCENCE OF LATTICE-MATCHED IN1-XGAXP1-YASY LAYERS ON GAAS [J].

KYURAGI, H ;

SUZUKI, A ;

MATSUMURA, S ;

MATSUNAMI, H .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :723-724

[6] LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L505-L508

[7] FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L729-L732

[8] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+

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