LPE GROWTH OF IN0.48GA0.52AS0.01P0.99 LATTICE-MATCHED TO GAAS FROM AN IN MELT RICH IN P

被引：5

作者：

KAWANISHI, H

HIRAOKA, M

YOSHIOKA, K

NISHIO, K

NAKAGOMI, T

TANAKA, S

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 09期

关键词：

D O I：

10.1049/el:19820263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：384 / 385

页数：2

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[1] YELLOW-GREEN IN1-XGAXP AND IN1-XGAXP1-ZASZ LEDS AND ELECTRON-BEAM-PUMPED LASERS PREPARED BY LPE AND VPE [J].

ERMAKOV, ON ;

GARBA, LS ;

GOLOVANOV, YA ;

SUSHKOV, VP ;

CHUKICHEV, MV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) :1190-1193

[2] LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV [J].

MUKAI, S ;

MATSUZAKI, M ;

SHIMADA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L505-L508

[3] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[4] LATTICE-MATCHED LPE GROWTH OF IN1-XGAXP1-YASY LAYERS ON (100) GAAS SUBSTRATES [J].

SUZUKI, A ;

KYURAGI, H ;

MATSUMURA, S ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L207-L210