SURFACE RECONSTRUCTION OF ERSI1.7(0001) INVESTIGATED BY SCANNING-TUNNELING-MICROSCOPY

被引：45

作者：

ROGE, TP ^{[1
]}

PALMINO, F ^{[1
]}

SAVALL, C ^{[1
]}

LABRUNE, JC ^{[1
]}

WETZEL, P ^{[1
]}

PIRRI, C ^{[1
]}

GEWINNER, G ^{[1
]}

机构：

[1] FAC SCI & TECH MULHOUSE,PHYS & SPECT ELECTR LAB,F-68093 MULHOUSE,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10998

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial (3 × 3) R30°ErSi1.7 films were grown on Si(111) by solid-phase epitaxy and examined in situ by ultrahigh-vacuum scanning tunneling microscopy (STM). Atomic resolution was achieved and the ErSi1.7(0001) surfaces were found to exhibit a high degree of structural order. Along with recent photoemission work, the analysis of high-resolution STM images shows that the surface atomic arrangement consists basically of a buckled Si layer without vacancies. An additional corrugation reflecting the 3 superstructure in bulk is superimposed on the p(1×1) structure. © 1995 The American Physical Society.

引用

页码：10998 / 11001

页数：4

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