PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS

被引：106

作者：

STRINGFELLOW, GB ^{[1
]}

LINNEBACH, R ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.327844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2212 / 2217

页数：6

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[21] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE
STRINGFELLOW, GB
HOM, G
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 794 - 796
[22] PHOTOLUMINESCENCE OF GAXAL1-XAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY
SUGIYAMA, K
KAWAKAMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1007 - &
[23] IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS1-XPX (X=0.87)
WOLFORD, DJ
NELSON, RJ
HOLONYAK, N
STREETMAN, BG
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (08) : 741 - 747
[24] EVIDENCE FOR RADIATIVE RECOMBINATION IN GAAS-1-XP-X-N (0.28 LESS THAN OR EQUAL TO 0.45) INVOLVING AN ISOLATED NITROGEN IMPURITY STATE ASSOCIATED WITH GAMMA-1 MINIMUM
WOLFORD, DJ
STREETMAN, BG
HSU, WY
DOW, JD
NELSON, RJ
HOLONYAK, N
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (23) : 1400 - 1403