SI/SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE

被引：15

作者：

GAN, CH

DELALAMO, JA

BENNETT, BR

MEYERSON, BS

CRABBE, EF

SODINI, CG

REIF, LR

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.337460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the valence-band discontinuity of strained Si1-xGex on (100) unstrained Si using p-Si1-xGex/Si/p-Si(1-)xGe(x) semiconductor-insulator semiconductor (SIS) structures with Ge compositions in the range 10 < x < 25%. The epitaxial heterostructures were grown by ultra-h igh-vacuum chemical-vapor-deposition. A new data analysis procedure is proposed for extracting small Delta E(v) values out of the current-voltage characteristics of the SIS heterostructures as a function of temperature, Our data indicates that the valence band discontinuity between Si and Si1-xGex can be approximated by Delta E(v) = 6.4x meV for O < x < 17.5%.

引用

收藏

页码：2430 / 2439

页数：10

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