GLOW-DISCHARGE-IMPLANTED, THERMALLY ANNEALED, OXIDE-PASSIVATED SILICON SOLAR-CELLS OF 19-PERCENT EFFICIENCY

被引：12

作者：

WESTBROOK, RD

WOOD, RF

JELLISON, GE

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：469 / 471

页数：3

共 14 条

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[2] 19.1-PERCENT EFFICIENT SILICON SOLAR-CELL [J].

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BLAKERS, AW ;

SHI, J ;

KELLER, EM ;

WENHAM, SR .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1163-1164

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[4]

GUSEV VM, 1966, FIZ TVERD TELA+, V8, P1363

[5]

JELLISON GE, 1986, IN PRESS SOLAR CELLS, V18, P93

[6]

JELLISON GE, 1980, NASA C PUBLICATION, V2169

[7]

Kirkpatrick A. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P706

[8]

Muller J. C., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P711

[9]

ROHATGI A, 1984, DEC SEM ANN PROGR RE

[10] HIGH-EFFICIENCY ION-IMPLANTED SILICON SOLAR-CELLS [J].

SPITZER, MB ;

TOBIN, SP ;

KEAVNEY, CJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :546-550

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