OBSERVATION OF A CORRELATION BETWEEN TWIN ORIENTATION AND SUBSTRATE STEP DIRECTION IN THIN GAAS FILMS GROWN ON INTENTIONALLY MISORIENTED SI(100)

被引：5

作者：

RAJKUMAR, KC ^{[1
]}

MADHUKAR, A ^{[1
]}

LIU, JK ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A transmission electron microscope study of GaAs grown on Si tilted 4°off (100) has for the first time revealed that of the two twin variants propagating to the GaAs film surface, a substrate tilt about a 〈011〉-type direction favors one over the other.

引用

页码：1160 / 1162

页数：3

共 6 条

[1]

FAN JCC, 1987, P MATERIALS RES SOC, V91

[2] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[3]

Grunthaner F. J., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V944, P153

[4]

LAO PD, IN PRESS J APPL PHYS

[5] STUDY OF HETEROEPITAXIAL INTERFACES BY ATOMIC RESOLUTION ELECTRON-MICROSCOPY [J].

OTSUKA, N ;

CHOI, C ;

KOLODZIEJSKI, LA ;

GUNSHOR, RL ;

FISCHER, R ;

PENG, CK ;

MORKOC, H ;

NAKAMURA, Y ;

NAGAKURA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :896-899

[6]

Tang W. J., UNPUB

← 1 →