STUDY OF HETEROEPITAXIAL INTERFACES BY ATOMIC RESOLUTION ELECTRON-MICROSCOPY

被引：34

作者：

OTSUKA, N

CHOI, C

KOLODZIEJSKI, LA

GUNSHOR, RL

FISCHER, R

PENG, CK

MORKOC, H

NAKAMURA, Y

NAGAKURA, S

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] TOKYO INST TECHNOL,DEPT MET,TOKYO 152,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：896 / 899

页数：4

共 11 条

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[4] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

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[5] (100) SUPERLATTICES OF CDTE-CD0.76MN0.24TE ON (100) GAAS [J].

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NURMIKKO, AV .

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[6]

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[7]

KOLODZIEJSKI LA, 1985, 1985 MCT WORKSH SAN

[8] STUDY OF THE INITIAL-STAGES OF GROWTH OF CDTE ON (001) GAAS [J].

MAR, HA ;

SALANSKY, N ;

CHEE, KT .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :898-900

[9] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].

OTSUKA, N ;

KOLODZIEJSKI, LA ;

GUNSHOR, RL ;

DATTA, S ;

BICKNELL, RN ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862

[10]

TUNG SK, 1965, J ELECTROCHEM SOC, V129, P1078

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