GROWTH AND IR-TRANSMISSION OF SB-DOPED POLYCRYSTALLINE GERMANIUM

被引:3
作者
KISHORE, R
PRAKASH, P
SINGH, SN
DAS, BK
机构
[1] Div. of Mater., NPL, New Delhi
关键词
D O I
10.1088/0268-1242/7/1/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Antimony-doped polycrystalline germanium ingots have been grown by a directional solidification method using graphite crucibles. Antimony-germanium alloys have been prepared by melting the desired amount of high purity antimony (99.9%) metal with high purity germanium (50-OMEGA cm, p-type) and subsequent directional solidification. Antimony dopant having 0.007-OMEGA cm resistivity and type n has been used to grow n-type polycrystalline germanium ingots from 50-OMEGA cm, p-type polycrystalline germanium charge. Infrared transmission of Sb-doped polycrystalline germanium has been measured and it has been found that Sb-doping enhances the IR-transmission. Undoped high purity 50-OMEGA cm, p-type germanium (6 mm thick) showing 0.12-0.20 transmission in the 5-15-mu-m wavelength range has been doped with antimony and directionally solidified. The Sb-doped large grain (2-5 mm) polycrystalline germanium grown by the above method shows enhanced IR-transmission in the 5-10-mu-m wavelength range and it is quite uniform (0.35 +/- 0.02).
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页码:21 / 26
页数:6
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