EFFECT OF HEAT TREATMENT ON OPTICAL PROPERTIES OF HEAVILY DOPED SILICON + GERMANIUM

被引：16

作者：

SPITZER, WG

TRUMBORE, FA

GOBELI, GW

机构：

来源：

关键词：

D O I：

10.1063/1.1713070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：206 / &

共 16 条

CARDONA, M .

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[3]

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[4]

HANNAY NB, 1959, SEMICONDUCTORS, P330

[5] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J].

HOWARTH, LE ;

GILBERT, JF .

MILLER, RC ;

SMITS, FM .

PHYSICAL REVIEW, 1957, 107 (01) :65-70

[7]

MOSS TS, 1959, OPTICAL PROPERTIES S, pCH9

[8]

MOSS TS, 1959, OPTICAL PROPERTIES S, pCH10

[9]

Paul W, 1960, HELV PHYS ACTA, V33, P329

[10]

Shockley W., 1950, ELECT HOLES SEMICOND, P242