DISPLACEMENT THRESHOLDS IN ZNO

被引：92

作者：

LOCKER, DR

MEESE, JM

机构：

[1] USAF,AEROSP RES LABS,WRIGHT PATTERSON AFB,OH 45433

[2] UNIV DAYTON,PHYS DEPT,DAYTON,OH 45409

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 242

页数：6

共 28 条

[1] INVESTIGATION OF INTERSTITIAL ZN CONCENTRATIONS IN ADDITIVELY COLORED ZNO USING UNIDIRECTIONAL CHANNELING AND BLOCKING TECHNIQUE
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[2] EVALUATION AND INTERPRETATION OF THRESHOLD DISPLACEMENT ENERGY MEASUREMENTS
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[3] MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN
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[J]. ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04): : 498 - &
[4] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM
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AUGUSTYNIAK, WM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309
[5] EXPERIMENTAL AND CALCULATED ATOMIC DISPLACEMENT THRESHOLD ENERGIES FOR BINARY SEMICONDUCTORS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 310 (1502): : 319 - &
[6] ATOMIC DISPLACEMENT ENERGIES FOR BINARY SEMICONDUCTORS
BRYANT, FJ
COX, AFJ
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (06): : 1734 - &
[7] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN CADMIUM TELLURIDE
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WEBSTER, E
[J]. PHYSICA STATUS SOLIDI, 1967, 21 (01): : 315 - &
[8] BUBE EH, 1960, PHOTOCONDUCTIVITY SO, P17
[9] SUBTHRESHOLD ELECTRON DAMAGE IN N-TYPE GERMANIUM
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MACKAY, JW
[J]. PHYSICAL REVIEW, 1968, 167 (03): : 745 - &
[10] COLOUR CENTRES IN ELECTRON IRRADIATED MGO
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SCHOW, OE
TOHVER, HT
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (12): : 2501 - &

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