IMPROVEMENT OF PATTERN AND POSITION ACCURACIES BY MULTIPLE ELECTRON-BEAM WRITING FOR X-RAY MASK FABRICATION

被引：6

作者：

AYA, S

MARUMOTO, K

YABE, H

MATSUI, Y

机构：

[1] Semiconductor Research Laboratory, Mitsubishi Electric Corp, 8-1-1 Tsukaguchi-honmachi, Amagasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 11B期

关键词：

X-RAY LITHOGRAPHY; X-RAY MASK; ELECTRON BEAM LITHOGRAPHY; POSITION ACCURACY; OVERLAY ACCURACY; LINEWIDTH CONTROL;

D O I：

10.1143/JJAP.32.L1707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To study the improvement of position and line-width accuracies of resist patterns for X-ray masks, we tried to examine multiple writing with an electron beam (EB) exposure system. First, the uncertainty of the position measurement is checked and reduced to 0.03 mum (3sigma) by the short-length measurement method. Then, it is found that by increasing the number of writing times from one to four, the overlay accuracy is improved from 0.04 mum to 0.02 mum (3sigma) and the line-width of the pattern is exactly controlled. These results show that sub-quarter-micron patterns are formed by the multiple-writing method with the present EB machine.

引用

页码：L1707 / L1710

页数：4

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