SPUTTERED W-TI FILM FOR X-RAY MASK ABSORBER

被引：25

作者：

YABE, H ^{[1
]}

MARUMOTO, K ^{[1
]}

AYA, S ^{[1
]}

YOSHIOKA, N ^{[1
]}

FUJINO, T ^{[1
]}

WATAKABE, Y ^{[1
]}

MATSUI, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,LSI R & D LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

X-RAY LITHOGRAPHY; X-RAY MASK; TUNGSTEN; W-TI; ABSORBER; STRESS; AMORPHOUS; SPUTTERING;

D O I：

10.1143/JJAP.31.4210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of DC-sputtered W-Ti absorber films such as internal stress, density and microstructure were systematically investigated for X-ray mask application. Smooth, stress-free amorphous W-Ti films with a comparatively high density of 16.5-17.0 g/cm3 were obtained by optimizing several conditions: gas pressure, N2 content in the working gas, DC power density and annealing temperature. The reproducibility of the film stress was about +/- 5 x 167 Pa. Reproducibility was found to be mainly determined by the degree to which the sputtering tool used could be controlled. Furthermore, it was confirmed that the optimized absorber films offered good stability under stress within 1 x 10(7) Pa when stored in an air atmos here for more than 250 days.

引用

页码：4210 / 4214

页数：5

共 16 条

[1] FORMATION OF MONOLITHIC MASKS FOR 0.25-MU-M X-RAY-LITHOGRAPHY [J].

CELLER, GK ;

TRIMBLE, LE ;

FRACKOVIAK, J ;

JURGENSEN, CW ;

KOLA, RR ;

NOVEMBRE, AE ;

WEBER, GR .

APPLIED PHYSICS LETTERS, 1991, 59 (24) :3105-3107

[2] PHYSICOCHEMICAL PROPERTIES IN TUNGSTEN FILMS DEPOSITED BY RADIO-FREQUENCY MAGNETRON SPUTTERING [J].

COLLOT, P ;

AGIUS, B ;

ESTRACHE, P ;

HUGON, MC ;

FROMENT, M ;

BESSOT, J ;

CRASSIN, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2319-2325

[3]

Gosnet A. M., 1987, Microelectronic Engineering, V6, P253, DOI 10.1016/0167-9317(87)90046-3

[4] AN ULTRA-LOW STRESS TUNGSTEN ABSORBER FOR X-RAY MASKS [J].

ITOH, M ;

HORI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (01) :165-168

[5] REDUCTION IN X-RAY MASK DISTORTION USING AMORPHOUS WN-CHI ABSORBER STRESS COMPENSATED WITH ION-BOMBARDMENT [J].

KANAYAMA, T ;

SUGAWARA, M ;

ITOH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :174-177

[6] STRESS AND MICROSTRUCTURE RELATIONSHIPS IN GOLD THIN-FILMS [J].

KEBABI, B ;

MALEK, CK ;

LADAN, FR .

VACUUM, 1990, 41 (4-6) :1353-1355

[7] STABLE LOW-STRESS TUNGSTEN ABSORBER TECHNOLOGY FOR SUB-HALF-MICRON X-RAY-LITHOGRAPHY [J].

KOLA, RR ;

CELLER, GK ;

FRACKOVIAK, J ;

JURGENSEN, CW ;

TRIMBLE, LE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3301-3305

[8]

Ku Y. C., 1990, Microelectronic Engineering, V11, P303, DOI 10.1016/0167-9317(90)90119-E

[9] USE OF ION-IMPLANTATION TO ELIMINATE STRESS-INDUCED DISTORTION IN X-RAY MASKS [J].

KU, YC ;

SMITH, HI ;

PLOTNIK, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2174-2177

[10] MEASUREMENT OF THERMAL-EXPANSION COEFFICIENTS OF W, WSI, WN, AND WSIN THIN-FILM METALLIZATIONS [J].

LAHAV, A ;

GRIM, KA ;

BLECH, IA .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :734-738

← 1 2 →