PHOTOEMISSION-STUDY OF THE ZNSE/GAAS (100) INTERFACE - COMPOSITION AND BAND OFFSET

被引：7

作者：

COLBOW, KM

GAO, Y

TIEDJE, T

DAHN, JR

EBERHARDT, W

机构：

[1] SIMON FRASER UNIV, DEPT PHYS, BURNABY V5A 1S6, BC, CANADA

[2] FORSCHUNGSZENTRUM JULICH, W-5170 JULICH 1, GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1116/1.577214

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The interface between ZnSe and GaAs (100) has been studied as a function of annealing temperature by high-resolution photoemission spectroscopy using synchrotron radiation. From an analysis of chemical shifts and relative intensities of the atomic core levels, we find an interfacial Ga2Se3 layer forms with loss of Zn and As at the interface. The valence band offset between ZnSe and GaAs is found to be 1.25 +/- 0.07 eV, from photoemission measurements of the top of the valence band.

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页码：2614 / 2617

页数：4

相关论文

共 20 条

[1]

Carlson T. A., 1975, PHOTOELECTRON AUGER

[2] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[3] MEASUREMENT OF ZNSE-GAAS(110) AND ZNSE-GE(110) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

KOWALCZYK, SP ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :482-485

[4]

LEON V, 1989, REV TEC INTEVEP, V9, P81

[5] STRUCTURE OF THE ZNSE/GAAS HETEROEPITAXIAL INTERFACE [J].

LI, D ;

GONSALVES, JM ;

OTSUKA, N ;

QIU, J ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1990, 57 (05) :449-451

[6] CHARACTERISTICS OF N-ZNSE N-GAAS USING METALORGANIC CHEMICAL-VAPOR DISPOSITION [J].

MAZURUK, K ;

BENZAQUEN, M ;

WALSH, D ;

MAKUC, B ;

JAYATIRTHA, H ;

AHARONI, H .

CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) :339-342

[7]

Mills K.C., 1974, THERMODYNAMIC DATA I

[8] BAND BENDINGS, BAND OFFSETS, AND INTERFACE INSTABILITIES IN P+-GAAS/N--ZNSE HETEROJUNCTIONS [J].

OLEGO, DJ .

PHYSICAL REVIEW B, 1989, 39 (17) :12743-12750

[9] INFLUENCE OF GAAS SURFACE STOICHIOMETRY ON THE INTERFACE STATE DENSITY OF AS-GROWN EPITAXIAL ZNSE EPITAXIAL GAAS HETEROSTRUCTURES [J].

QIU, J ;

QIAN, QD ;

GUNSHOR, RL ;

KOBAYASHI, M ;

MENKE, DR ;

LI, D ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1272-1274

[10] ELECTRONIC PASSIVATION OF GAAS-SURFACES THROUGH THE FORMATION OF ARSENIC SULFUR BONDS [J].

SANDROFF, CJ ;

HEGDE, MS ;

FARROW, LA ;

CHANG, CC ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :362-364