BAND BENDINGS, BAND OFFSETS, AND INTERFACE INSTABILITIES IN P+-GAAS/N--ZNSE HETEROJUNCTIONS

被引：46

作者：

OLEGO, DJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12743

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12743 / 12750

页数：8

共 29 条

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE
[2] ELECTRICAL-PROPERTIES OF N-N ZNSE/GAAS HETEROJUNCTIONS
BAWOLEK, EJ
WESSELS, BW
[J]. THIN SOLID FILMS, 1985, 131 (3-4) : 173 - 183
[3] BAND OFFSETS IN TETRAHEDRAL SEMICONDUCTORS
CARDONA, M
CHRISTENSEN, NE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1285 - 1289
[4] DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1988, 37 (09): : 4528 - 4538
[5] COLAK S, UNPUB 19TH P INT C P
[6] GROWTH OF UNDOPED ZNSE ON (100) GAAS BY MOLECULAR-BEAM EPITAXY - AN INVESTIGATION OF THE EFFECTS OF GROWTH TEMPERATURE AND BEAM PRESSURE RATIO
DEPUYDT, JM
CHENG, H
POTTS, JE
SMITH, TL
MOHAPATRA, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4756 - 4762
[7] IMPROVED PHOTOLUMINESCENCE OF GAAS IN ZNSE/GAAS HETEROJUNCTIONS GROWN BY ORGANOMETALLIC EPITAXY
GHANDHI, SK
TYAGI, S
VENKATASUBRAMANIAN, R
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1308 - 1310
[8] HETEROJUNCTION BAND DISCONTINUITIES FOR GAAS GROWN ON GE(110) - TIME-VARIATION
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 498 - 506
[9] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[10] HARTMANN H, 1982, CURRENT TOPICS MATER, V9, P1