BAND OFFSETS IN TETRAHEDRAL SEMICONDUCTORS

被引：31

作者：

CARDONA, M

CHRISTENSEN, NE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1285 / 1289

页数：5

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共 63 条

[1] LINEAR METHODS IN BAND THEORY
ANDERSEN, OK
[J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM
BACHELET, GB
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1985, 31 (02) : 879 - 887
[4] MEAN-VALUE POINT IN BRILLOUIN ZONE
BALDERESCHI, A
[J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5212 - 5215
[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[6] PROBING SEMICONDUCTOR SEMICONDUCTOR INTERFACES
BAUER, RS
MARGARITONDO, G
[J]. PHYSICS TODAY, 1987, 40 (01) : 27 - 34
[7] GASB-INAS-GASB HETEROSTRUCTURES STUDIED UNDER HYDROSTATIC-PRESSURE
BEERENS, J
GREGORIS, G
PORTAL, JC
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4742 - 4747
[8] HGTE-CDTE SUPERLATTICES - MAGNETOOPTICS AND BAND-STRUCTURE
BERROIR, JM
GULDNER, Y
VOOS, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1793 - 1798
[9] COMPARISON OF DIPOLE LAYERS, BAND OFFSETS, AND FORMATION ENTHALPIES OF GAAS-ALAS (110) AND (001) INTERFACES
BYLANDER, DM
KLEINMAN, L
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (18) : 2091 - 2094
[10] ABINITIO (GAAS)3(ALAS)3 (001) SUPERLATTICE CALCULATIONS - BAND OFFSETS AND FORMATION ENTHALPY
BYLANDER, DM
KLEINMAN, L
[J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3229 - 3236

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