IMPROVED PHOTOLUMINESCENCE OF GAAS IN ZNSE/GAAS HETEROJUNCTIONS GROWN BY ORGANOMETALLIC EPITAXY

被引：14

作者：

GHANDHI, SK

TYAGI, S

VENKATASUBRAMANIAN, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 14期

关键词：

D O I：

10.1063/1.100005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1308 / 1310

页数：3

共 12 条

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[10] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

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BHAT, R .

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