A STUDY ON EXCIMER LASER AMORPHOUS-SILICON FILM CRYSTALLIZATION

被引：5

作者：

BIANCONI, M ^{[1
]}

FONSECA, FJ ^{[1
]}

SUMMONTE, C ^{[1
]}

FORTUNATO, G ^{[1
]}

机构：

[1] CNR,IESS,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80223-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single shot laser annealing was utilized to crystallize GD-deposited amorphous silicon films. No explosive emission of hydrogen was detected for 2% laser beam spatial homogeneity. Computer simulation correctly predicts the melting threshold, but points out that the process is not described by pure heat flow calculation.

引用

页码：725 / 728

页数：4

共 14 条

[11] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].