APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS

被引：34

作者：

IIDA, A

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 54卷 / 02期

关键词：

Compendex;

D O I：

10.1002/pssa.2210540235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals containing minute lattice defects caused by the diffusion of Cu, Li, and Au are investigated by using X-ray triple crystal diffractometry (TCD), in which the kinematical and dynamical components are measured separately. From the TCD intensity curves the relative defect volume is estimated.

引用

页码：701 / 706

页数：6

共 6 条

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[2] DEKOCK AJR, 1973, PHILIPS RES REP S, V1, P1
[3] SEPARATE MEASUREMENTS OF DYNAMICAL AND KINEMATICAL X-RAY DIFFRACTIONS FROM SILICON-CRYSTALS WITH A TRIPLE CRYSTAL DIFFRACTOMETER
IIDA, A
KOHRA, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 533 - 542
[4] GOLD-INDUCED DISLOCATION LOOPS IN SILICON CRYSTALS
IIZUKA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (11) : 1018 - &
[5] EFFECT OF IMPURITIES ON DIFFRACTION CURVES OF X-RAYS FROM DISLOCATION-FREE SILICON CRYSTALS
KIKUTA, S
KOHRA, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (07) : 1449 - &
[6] YUE JT, 1977, SEMICONDUCTOR SILICO, P596

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