ION-IMPLANTATION-INDUCED DAMAGE AND RESONANT LEVELS IN PB1-XSNXTE

被引：32

作者：

GRESSLEHNER, KH

PALMETSHOFER, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.328283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4735 / 4738

页数：4

共 14 条

[1] ANALYSIS OF SOLIDUS LINES FOR PBTE AND SNTE [J].

BREBRICK, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) :659-692

[2]

Dimmock J. O., 1971, P INT C PHYS SEM NAR, P319

[3] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

DONNELLY, JP ;

LINDLEY, WT ;

FOYT, AG ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&

[4]

Gresslehner K. H., 1978, Physics of Narrow Gap Semiconductors, P205

[5]

HEINRICH H, 1974, LATTICE DEFECTS SEMI, P264

[6] CLUSTER CALCULATIONS OF EFFECTS OF LATTICE VACANCIES IN PBTE AND SNTE [J].

HEMSTREET, LA .

PHYSICAL REVIEW B, 1975, 12 (04) :1212-1217

[7] P-N-JUNCTION FORMATION BY TE+ ION-IMPLANTATION INTO SOLUTION-GROWN PB1-XSNXTE [J].

KATO, Y ;

KATAYAMA, Y ;

KOBAYASHI, KLI ;

KOMATSUBARA, KF .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4614-4615

[8]

LOPEZOTERO A, 1978, THIN SOLID FILMS, V49, P1

[9]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P82

[10] ION-IMPLANTATION-INDUCED LATTICE-DEFECTS IN PBTE [J].

PALMETSHOFER, L ;

HEINRICH, H ;

BENKA, O ;

RESCHENEDER, W .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :557-559

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