ION-IMPLANTATION-INDUCED LATTICE-DEFECTS IN PBTE

被引：26

作者：

PALMETSHOFER, L ^{[1
]}

HEINRICH, H ^{[1
]}

BENKA, O ^{[1
]}

RESCHENEDER, W ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,INST PHYS,LINZ,AUSTRIA

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：557 / 559

页数：3

共 9 条

[1] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

DONNELLY, JP ;

LINDLEY, WT ;

FOYT, AG ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&

[2]

HEINRICH H, 1974, LATTICE DEFECTS SEMI, P264

[3] ACCEPTOR RESONANCES IN HG1-XCDXTE [J].

LIU, L ;

VERIE, C .

PHYSICAL REVIEW LETTERS, 1976, 37 (07) :453-456

[4] N-P JUNCTION IR DETECTORS MADE BY PROTON BOMBARDMENT OF EPITAXIAL PBTE [J].

LOGOTHETIS, EM ;

VARGA, AJ ;

JOHNSON, WJ ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :411-+

[5] HIGH MOBILITY AS-GROWN PBTE FILMS PREPARED BY HOT WALL TECHNIQUE [J].

LOPEZOTERO, A ;

HAAS, LD .

THIN SOLID FILMS, 1974, 23 (01) :1-6

[6]

MAUGER A, 1974, 12TH P INT C PHYS SE, P1166

[7]

PALMETSHOFER L, UNPUBLISHED

[8]

Pratt G. W. Jr., 1973, Journal of Nonmetals, V1, P103

[9]

[No title captured]

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