HIGH MOBILITY AS-GROWN PBTE FILMS PREPARED BY HOT WALL TECHNIQUE

被引：35

作者：

LOPEZOTERO, A ^{[1
]}

HAAS, LD ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV, LEHRKANZEL EXPTL PHYS 2, LINZ, AUSTRIA

来源：

THIN SOLID FILMS | 1974年 / 23卷 / 01期

关键词：

D O I：

10.1016/0040-6090(74)90211-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 6

页数：6

共 10 条

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].

ALLGAIER, RS ;

SCANLON, WW .

PHYSICAL REVIEW, 1958, 111 (04) :1029-1037

[2]

DUH K, 1973, B AM PHYS SOC, V18, P325

[3] PREPARATION AND PROPERTIES OF PB1-X SNX TE EPITAXIAL FILMS [J].

FARINRE, TO ;

ZEMEL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :121-&

[4] P-T-X PHASE DIAGRAM OF LEAD TELLURIDE SYSTEM [J].

FUJIMOTO, M ;

SATO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) :128-&

[5] ANNEALING STUDIES OF PBTE AND PB1-XSNXTE [J].

HEWES, CR ;

ADLER, MS ;

SENTURIA, SD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1327-1332

[6] HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING [J].

HOLLOWAY, H ;

LOGOTHEI.EM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4522-&

[7] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[8]

LOPEZOTERO A, TO BE PUBLISHED

[9] PRECIPITATION OF TE AND PB IN PBTE CRYSTALS [J].

SCANLON, WW .

PHYSICAL REVIEW, 1962, 126 (02) :509-&

[10]

ZEMEL JN, 1965, PHYS REV A, V140, P330

← 1 →