BLUE ELECTROLUMINESCENCE FROM POROUS SILICON-CARBIDE

被引：53

作者：

MIMURA, H ^{[1
]}

MATSUMOTO, T ^{[1
]}

KANEMITSU, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of a new blue light emitting diode (LED) using porous SiC as a luminescent material is described. The porous SiC is electrochemically formed on a single crystalline 6H-SiC substrate fabricated by the Acheson method. The diode structure is a Schottky-like junction between indium tin oxide (ITO) and porous SiC. The ITO/porous SiC junction shows a rectification behavior and a blue electroluminescence (EL) under the forward direction. © 1994 American Institute of Physics.

引用

页码：3350 / 3352

页数：3

共 15 条

[1]

Acheson A. G, 1892, England Patent, Patent No. 17911

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].