VISIBLE-LIGHT EMISSION FROM A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE

被引：38

作者：

FUTAGI, T

MATSUMOTO, T

KATSUNO, M

OHTA, Y

MIMURA, H

KITAMURA, K

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Kawasaki 211, 1618 Ida, Nakahara-ku

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a new type of light-emitting diode based on a porous silicon and microcrystalline silicon carbide pn junction. The visible light emission from 580 to 820 nm with a peak of 700 nm was observed at forward bias voltages larger than 18 V, and the emission was quite uniform over an area of 1 cm2.

引用

页码：1209 / 1210

页数：2

共 16 条

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